Abstract: In high power applications, laminated busbar has been used as main connection to reduce the loop stray inductance. Nowadays, the introduction of SiC device brings more strict requirements on ...
Abstract: Advanced packaging solutions for wide bandgap power devices, such as silicon carbide (SiC) MOSFETs, can help realize their full potential. Additively printed electronics present a promising ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback